Patent · US Expired

Magnetoresistor

US4978938A · kind A · utility

26Cited by
2References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 25, 1989
Grant dateDec 18, 1990
Priority date
Expiry dateOct 25, 2009

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01R33/09
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A magnetoresistive sensor that includes a very thin film of monocrystalline semiconductive material, having at least a moderate carrier mobility and no greater than a moderate carrier density. The device includes means for inducing or enhancing an accumulation layer adjacent the film outer surface. With film thicknesses below 5 micrometers, preferably below 3 micrometers, the presence of the accumulation layer can have a very noticeable effect. The unexpected improvement provides a significant apparent increase in mobility and conductivity of the semiconductive material, and an actual increase in magnetic sensitivity and temperature insensitivity. A method for making the sensor is also described.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.