Insulated substrate for flip-chip integrated circuit device
US4979015A · kind A · utility
17Cited by
4References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 16, 1988 |
| Grant date | Dec 18, 1990 |
| Priority date | — |
| Expiry date | Sep 16, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15312
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate for mounting a flip-chip on a metallized circuit on the upper surface of the substrate. The substrate is silicon carbide condensed on a graphite or silicon core. The upper surface of the silicon carbide has a layer of insulating material comprised of silicon oxide, silicon nitride, aluminum nitride, boron nitride, an organic insulator such as polyimide, and diamond. The insulator prevents inadvertent shorting of the integrated circuit. The insulating layer can be deposited on the silicon carbide by such processes as chemical vapor deposition, sputtering, spinning or roller coating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.