Thin film formation apparatus
US4979467A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 5, 1989 |
| Grant date | Dec 25, 1990 |
| Priority date | — |
| Expiry date | May 5, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3321
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An apparatus for forming thin films on substrates includes a reactor vessel, and discharge and grounded electrodes opposably disposed within the reactor vessel. The discharge electrode has walls surrounding a hollow space having an outlet that is open to the grounded electrode. A starting gas is introduced into the reactor vessel through that hollow space. A radio frequency voltage is applied between the discharge and grounded electrodes to produce a discharge plasma zone therebetween. The potential of the discharge electrode is biased toward the negative side so that the discharge electrode behaves as a cathode to which a direct current voltage is applied, whereby a high density plasma is obtained in the hollow space of the discharge electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.