Method for recirculating high-temperature etching solution
US4980017A · kind A · utility
57Cited by
4References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 26, 1989 |
| Grant date | Dec 25, 1990 |
| Priority date | — |
| Expiry date | Sep 26, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T137/2499
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for recirculating a high-temperature etching solution according to the present invention comprises the steps of continuously removing, from a bath for etching a wafer for a semiconductor device, a portion of an etching solution contained in the etching bath, injecting a predetermined amount of pure water for adjusting the concentration of the etching solution into the removed etching solution, heating the resulting solution to a predetermined temperature, and recirculating the heated solution into the etching bath.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.