Metal organic chemical vapor deposition method with controlled gas flow rate
US4980204A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 1988 |
| Grant date | Dec 25, 1990 |
| Priority date | — |
| Expiry date | Nov 15, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/935
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus for growing a compound semiconductor layer by metal organic chemical vapor deposition (MOCVD) is disclosed. Utilizing the apparatus, the semiconductor layer of uniform thickness and uniform composition can be grown. The apparatus includes a plurality of vent pipes which spout a mixed gas of source material gases and a dilution gas into a reactor chamber, vertical to a substrate surface. The apparatus also includes a gas supply system in which a gas flow rate through each vent pipe is made to be controllable individually by a flow controlling device. In addition, a controller is operatively connected to the flow controlling devices, so that automatic growth of a semiconductor layer of a high quality can be achieved. When two source material gases used are mutually too reactive and deposits are formed within the gas supply system, two separate gas supply systems for these two gases are demonstrated to be effective. Another embodiment which enables individual control of concentration of the source material gas and the gas flow rate through each vent pipe, is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.