Patent · US Expired

Method for producing a resist structure on a semiconductor

US4980316A · kind A · utility

60Cited by

6References

15Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventor

Holger Huebner · Neustadt an der Aisch, DE

Key dates

Filing date	Jul 26, 1989
Grant date	Dec 25, 1990
Priority date	—
Expiry date	Jul 26, 2009

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S438/951
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for producing a resist structure on a semiconductor material which has an opening tapering towards the semiconductor material is provided. This method can be used, for example, for the manufacturing of T-gate metallizations in a field effect transistor. In this method, a thin, upper resist layer is structured, and the structure is transferred onto a silicon nitride layer. The structure is then transferred into a thickly applied resist while widening the upper part of the etching profile. The method is accomplished by a succession of anisotropic and isotropic dry etching steps.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.