Hexagonal silicon carbide platelets and preforms and methods for making and using same
US4981665A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 22, 1988 |
| Grant date | Jan 1, 1991 |
| Priority date | — |
| Expiry date | Apr 22, 2008 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2004/64
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Crystalline silicon carbide wherein at least 90 weight percent of the silicon carbide is formed from a plurality of hexagonal crystal lattices wherein at least 80 weight percent of the crystals formed from the lattices contain at least a portion of opposing parallel base faces separated by a distance of from 0.5 to 20 microns. The crystals may be in the form of separate particles, e.g. separate platelets, or may comprise an intergrown structure. The crystalline silicon carbide of the invention is produced by heating a porous alpha silicon carbide precursor composition comprising silicon and carbon in intimate contact to a temperature of from 2100.degree. C. to 2500.degree. C. in a non-reactive atmosphere. The materials are high performance materials finding use in reinforcing, high temperature thermal insulating, improvement of thermal shock resistance, and modification of electrical properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.