Polycrystalline CVD diamond substrate for single crystal epitaxial growth of semiconductors
US4981818A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 1990 |
| Grant date | Jan 1, 1991 |
| Priority date | — |
| Expiry date | Feb 13, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is directed towards the production of a single crystal semiconductor device mounted in intimate contact with a polycrystalline CVD diamond substrate which allows the high heat conductivity of diamond to keep the device cool. This device is made by a method comprising the steps of placing in a reaction chamber, a single crystal of silicon heated to an elevated CVD diamond-forming temperature. A hydrocarbon/hydrogen gaseous mixture is provided within the chamber and is at least partially decomposed to form a polycrystalline CVD diamond layer on said silicon. During the deposition/growth phase, an intermediate layer of single crystal SiC has been found to form between the single crystal of silicon and the polycrystalline CVD diamond layer. In the next step of the process, the silicon is etched or removed to reveal the single crystal SiC supported by the polycrystalline CVD diamond layer. Finally, a semiconductor layer (e.g. silicon, SiC, GaAs, or the like) is grown on the exposed single crystal of SiC to produce a single crystal semiconductor polycrystalline CVD diamond mounted device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.