Gated structure for controlling fluctuations in mesoscopic structures
US4982248A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 11, 1989 |
| Grant date | Jan 1, 1991 |
| Priority date | — |
| Expiry date | Jan 11, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/00
Abstract
A new solid state device based on mesoscopic phenomena is described. A structure of the mesoscopic device includes phase altering scattering sites at various energy levels disposed in proximity to a conductive channel. The carries in the channel, being isolated by a potential barrier, are not in substantial scattering interaction with the phase altering scattering sites in the absence of a sufficiently large voltage at the gate of the mesoscopic device. Increasing the potential at the gate, imposes a localized electric field along the channel, increases the energy levels of the carriers in the channel, and allows the carriers to interact with the phase altering scattering sites, thereby controllably varying the conductance of the channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.