Power rectifier with trenches
US4982260A · kind A · utility
128Cited by
4References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 2, 1989 |
| Grant date | Jan 1, 1991 |
| Priority date | — |
| Expiry date | Oct 2, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/106
Abstract
A semiconductor power rectifier attains low forward voltage drop, low reverse leakage current and improved switching speed by utilizing Schottky contact regions in a p-i-n rectifier along with other means for reducing the required forward bias voltage. In a preferred embodiment, the other means for reducing the required forward bias voltage includes a respective trench between each respective pair of successively spaced current interruption means.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.