Semiconductor vapor phase growing apparatus
US4982693A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 4, 1983 |
| Grant date | Jan 8, 1991 |
| Priority date | — |
| Expiry date | Mar 4, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor vapor phase growing apparatus wherein a semiconductor wafer is heated in a reaction furnace, and an output of a source for heating, the temperature of the wafer, and flow quantities of gases supplied to the reaction furnace for vapor phase growing a semiconductor on the wafer by a chemical reaction of the gases are controlled by a control unit according to a predetermined sequences, there are provided a temperature detector for detecting the temperature of the wafer and output control means controlling the output of the source according to a given reference value. The control unit is consitituted by memory means storing a program of executing the sequences and linearly raising and lowering the wafer temperature at a predetermined temperature gradient in a plurality of divided time lateral units by making different the rates of temperature change in respective time interval units, and a CPU for processing the program.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.