Patent · US Expired

Method for generating thin layers on a silicone base

US4983419A · kind A · utility

7Cited by

2References

18Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Hans-Joachim Henkel · Erlangen, DE
Helmut Markert · Nuremberg, DE
Wolfgang Roth · Zweibrücken, DE
Wolfgang Kautek · Wien, AT

Key dates

Filing date	Jul 21, 1989
Grant date	Jan 8, 1991
Priority date	—
Expiry date	Jul 21, 2009

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC08J2383/04
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The invention provides a method for generating thin layers on a silicon base having a high purity, thermal stability and good dielectric properties wherein non-functionalized organosiloxanes with alkyl groups or alkyl and aryl groups are photochemically polymerized and/or cross-linked by means of pulsed laser radiation with a wavelength of less than 400 nm where the pulse duration is 10 ps to 1 ms, the pulse frequency is 1 Hz to 10 KHz and the energy density is at least 1 J/cm.sup.2 and the irradiation takes placed with one or more pulses. The layers can be used as passivating and insulating layers for semiconductor components and circuits.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.