Method for curing spin-on-glass film by utilizing ultraviolet irradiation
US4983546A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 1989 |
| Grant date | Jan 8, 1991 |
| Priority date | — |
| Expiry date | Dec 20, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31055
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for curing spin-on-glass formed on a wafer film which insulates the metal layers and flattens any step difference in the process for manufacturing a multi-layered metal layer of a highly integrated semiconductor device which comprises establishing a predetermined initial temperature in a heating chamber with an ultraviolet light source. A wafer, on which a SOG film to be cured is formed, is then introdued into the heated chamber and the temperature gradually increased to a predetermined maximum temperature. The SOG film is irradiated with ultraviolet light at a predetermined wavelength simultaneously with the application of heat at the maximum temperature for a predetermined time. The wafer is then cooled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.