Semiconductor device with conductive rectifying rods
US4984037A · kind A · utility
6Cited by
19References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 11, 1986 |
| Grant date | Jan 8, 1991 |
| Priority date | — |
| Expiry date | Dec 11, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device, specifically an FET, having a body which includes a matrix of semiconductor material, specifically silicon, having an array of individual rods of conductive material, specifically TaSi.sub.2, disposed therein. The rods form Schottky barriers with the semiconductor material. A gate contact is made to several of the rods at one end, and source and drain contacts are made to the matrix of semicondcutor material. Current flow in the semiconductor material of the matrix between the source and the drain is controlled by applying biasing potential to the gate contact to enlarge the depletion zones around the rods.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.