Patent · US Expired

Silicon pressure sensor having a resistance layer of polycrystalline semicondutor

US4984046A · kind A · utility

5Cited by

4References

17Claims

0Family size

Assignee

U.S. Philips Corporation · US

Inventors

Volker Graeger · Kürten, DE
Rolf U. D. Kobs · Tornesch, DE
Horst Schafer · Aschaffenburg, DE
Heinrich Zeile · Hamburg, DE

Key dates

Filing date	Apr 27, 1989
Grant date	Jan 8, 1991
Priority date	—
Expiry date	Apr 27, 2009

Classification

Technology area (CPC H)Electricity
CPC primaryH01C10/10
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

The invention relates to a method of manufacturing a polycrystalline semiconductor resistance layer of silicon on a silicon body. First an insulating layer is formed on the silicon body and then a polycrystalline silicon layer is deposited. To the deposited polycrystalline silicon layer is applied a further polycrystalline silicon layer having a crystallite structure coarser with respect to that of the first polycrystalline silicon layer. The two polycrystalline silicon layers are additionally doped. The invention further relates to a silicon pressure sensor having such a resistance layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.