Electric fuse for a redundancy circuit
US4984054A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 20, 1990 |
| Grant date | Jan 8, 1991 |
| Priority date | — |
| Expiry date | Feb 20, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention comprises a field oxide film formed on a silicon substrate, an underlying film of polycrystal silicon formed on a portion thereof and an insulating film formed so as to cover the field oxide film comprising the underlying film. A surface stepped portion of the insulating film is formed by a portion with an underlying film and a portion without an underlying film under the insulating film, and a blowout portion of a fuse is formed along the surface stepped portion. There are terminal portions at both ends of the blowout portion of the fuse and an aluminum line is connected thereto. In addition, the whole portions comprising the fuse portion are covered with another insulating film and the whole is protected. The fuse is employed as one example in a redundancy circuit of a MOS dynamic RAM having redundancy memory cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.