Semiconductor device in which wiring layer is formed below bonding pad
US4984061A · kind A · utility
85Cited by
7References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 10, 1988 |
| Grant date | Jan 8, 1991 |
| Priority date | — |
| Expiry date | May 10, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor device wherein a bonding pad is formed on an electrode through an insulating interlayer and a bonding wire is bonded to the bonding pad by thermocompression bonding, a through hole for connecting the bonding pad and the electrode is formed in the insulating interlayer above a contact hole for connecting the electrode and an active region formed in a semiconductor substrate. Metal columns of members of the electrode filled in the contact hole and members of the bonding pad filled in the through hole are formed under the bonding pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.