Polysiloxane pattern-forming material with SiO.sub.4/2 units and pattern formation method using same
US4985342A · kind A · utility
71Cited by
9References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 7, 1988 |
| Grant date | Jan 15, 1991 |
| Priority date | — |
| Expiry date | Nov 7, 2008 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0757
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Pattern-forming material useful in producing highly accurate submicron patterns having unusually high aspect ratios at superior resolutions are obtained by using a solvent-soluble polyorganosiloxane having SiO.sub.4/2 units and at least one other organosiloxane unit which contains a high energy radiation sensitive group. The polyorganosiloxane has a softening temperature greater than room temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.