Method for making self-aligned ohmic contacts
US4985369A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 2, 1988 |
| Grant date | Jan 15, 1991 |
| Priority date | — |
| Expiry date | Sep 2, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28587
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a semiconductor device with self-aligned ohmic contacts which exhibits substantially reduced shadowing. The gate material is covered with a layer of gate mask material. The gate mask material is selectively removed to form a gate mask having sidewalls with slope profiles of an inclination sufficient to avoid maximum shadow encroachment for subsequent material depositions. Gate mask material is characterized by the sidewalls having an angularity relative to the surface of the substrate which is at least as great as the angle of evaporative deposition of ohmic contact material from a point evaporative source to the extreme gate position on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.