Making a semiconductor device with ammonia treatment of photoresist
US4985374A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 1990 |
| Grant date | Jan 15, 1991 |
| Priority date | — |
| Expiry date | Jun 27, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/948
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method of a semiconductor device of the present invention comprises a first step of exposing a periphery of a first region of a photoresist layer coating an insulating layer formed on a semiconductor substrate and a periphery of a second region for positioning, and a second step of heating said photoresist layer in ammonia atmosphere and forming an alkali insoluble portion in the periphery of the first region and that of the second region, a third step of exposing a third region, which is smaller than the first region, and the second region and developing these regions, a fourth step of etching the third region and the second region to a predetermined depth, and a fifth step of repeating the third and fourth steps once or more in a region, which is smaller than the third region, and the second region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.