Glaze resistor
US4985377A · kind A · utility
8Cited by
5References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 7, 1988 |
| Grant date | Jan 15, 1991 |
| Priority date | — |
| Expiry date | Dec 7, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01C17/0656
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention relates to glaze resistors which are used for electronic parts of hybrid integrated circuit devices, chip resistors, resistor network, etc. The glaze resistor comprises 4.0 to 70.0 wt % of a conductive component composed of a metal silicide and a metal boride and 30.0 to 96.0 wt % of glass in which a rate of said metal boride is 1.0 to 68.0 wt %. Thus, the glaze resistor can be formed by sintering in a non-oxidizing atmosphere and can provide a circuit, together with conductor pattern of base metals such as Cu.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.