Thin film formation method
US4987008A · kind A · utility
31Cited by
11References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 24, 1989 |
| Grant date | Jan 22, 1991 |
| Priority date | — |
| Expiry date | May 24, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Film formation without damage on the surface of semiconductor can be established by generating active halogen or active hydrogen by a photochemical reaction, cleaning on the surface of the semiconductor by removing oxide formed thereon by means of the active elements, and continuously thereafter fabricating the film by a photochemical reaction in the same device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.