Method for providing improved insulation in VLSI and ULSI circuits
US4987101A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 1988 |
| Grant date | Jan 22, 1991 |
| Priority date | — |
| Expiry date | Dec 16, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved VLSI and ULSI structure and a method of forming the same are provided. The structure starts with a base member having a plurality of supports formed thereon and extending upwardly therefrom. A selectively removable material is deposited on the base member and around the supports. An insulating cap is formed over the supports and the removable material. Access openings are provided through the cover (or base) and the removable material is removed through the access openings. Thereafter a partial vacuum is formed in the space evacuated by the removable material, and the access openings sealed to provide a dielectric medium around the supports and between the base and cap member having a dielectric constant of less than 2.0.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.