Particle source for a reactive ion beam etching or plasma deposition installation
US4987346A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 18, 1989 |
| Grant date | Jan 22, 1991 |
| Priority date | — |
| Expiry date | Jan 18, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/08
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention relates to a particle source with which positive, negative, and neutral particles can be generated and applied on a substrate. The particle source comprises a container (26) in which a gas or gas mixture to be ionized is held. Into this container (26) an electromagnetic wave irradiates which preferably is a microwave. A torus-shaped magnetic field, which is generated with the aid of permanent magnets (32, 33) or electromagnets, simultaneously projects into the container (26). With the aid of a special control grid configuration (38, 39, 40) it becomes possible to draw off positive, negative or neutral particles from the container (26).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.