Electrically tunable semiconductor laser with ridge waveguide

US4987576A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventor

• Jochen Heinen · Haar, DE

Key dates

• Filing date: Nov 3, 1989
• Grant date: Jan 22, 1991
• Expiry date: Nov 3, 2009

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/06206
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Electrically tunable semiconductor laser with ridge waveguide. A semiconductor laser with MCRW structure has an intermediate layer grown on an active layer, a stripe-shaped tuning layer that is flanked by a first lateral region having a first tuning contact and by a second lateral region having a second tuning contact, a cover layer and a contact layer. The supply of power occurs via a substrate contact and via a ridge contact and the laser is tunable with currents injected into the tuning layer via the tuning contacts.