Fabrication of devices utilizing a wet etchback procedure
US4988405A · kind A · utility
2Cited by
6References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 21, 1989 |
| Grant date | Jan 29, 1991 |
| Priority date | — |
| Expiry date | Dec 21, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Smoothing irregularities in a surface is accomplished by a wet-etchback technique. In this technique, a polysilicate composition is formed on a nonplanar substrate such as the surface of an integrated-circuit wafer. The polysilicate is etched away and the etching is continued into the underlying surface. As a result, a substantial smoothing of the surface is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.