Method for fabricating interconnection structure
US4988423A · kind A · utility
71Cited by
2References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 3, 1989 |
| Grant date | Jan 29, 1991 |
| Priority date | — |
| Expiry date | Nov 3, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/958
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method for fabricating an interconnection structure comprising a step of depositing an Al or Al alloy film on a dielectric film by a sputtering method improved in step coverage, a step of processing said Al or Al alloy film or a layered metal film thereof with another metal film into a metal line, and a step of depositing a film of high melting point metal or alloy thereof on the top and side surfaces of said line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.