Selective area chemical vapor deposition
US4990374A · kind A · utility
69Cited by
3References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 28, 1989 |
| Grant date | Feb 5, 1991 |
| Priority date | — |
| Expiry date | Nov 28, 2009 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4583
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A fluid dynamic method and apparatus effects the isolation of a predetermined deposition area in a hot-walled chemical vapor deposition chamber and limits the deposition to that area. The disclosed technique reduces stress and cracking in materials produced by chemical vapor deposition, prevents backside growth, and has particular utility in the fabrication by the chemical vapor deposition process of large, lightweight mirrors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.