Light emitting semiconductor having a rear reflecting surface
US4990970A · kind A · utility
113Cited by
1References
3Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 23, 1990 |
| Grant date | Feb 5, 1991 |
| Priority date | — |
| Expiry date | Mar 23, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
Abstract
A light emitting semiconducting structure is formed over a light reflecting surface using epitaxial growth techniques. The light reflecting surface is provided by an appropriate metal layer intermediately disposed between two dielectric layers, this multi-layer structure is disposed intermediate between an underlying substrate and the overlaying light emitting semiconducting components. The light reflecting surface provides enhanced photon reflectance for the light emitting device. The active region of the light emitting device is formed using epitaxial growth techniques.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.