Method of forming a thin film by plasma CVD and apapratus for forming a thin film
US4991542A · kind A · utility
192Cited by
3References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 12, 1989 |
| Grant date | Feb 12, 1991 |
| Priority date | — |
| Expiry date | Jun 12, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3244
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
With the method and apparatus for forming a thin film by plasma CVD according to this invention, a substrate is disposed between a pair of feed-gas supplying electrodes, and plasma is generated by applying a high frequency electric power to the substrate as an object to be processed. Feed gas is supplied from the feed-gas supplying electrodes into the plasma and is activated, whereby a film is formed on the substrate. Therefore, a solid and fine thin film which has corrosion-resistive and abrasion-resistive properties is formed on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.