Chemical vapor deposition of cadmium mercury telluride
US4992303A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 1990 |
| Grant date | Feb 12, 1991 |
| Priority date | — |
| Expiry date | Mar 19, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In the manufacture of an electronic device, e.g. an infrared detector of cadmium mercury telluride, a gas stream (36) comprising two or more reactants is passed over a heated substrate (29) in a reaction zone (C) of a reactor vessel (1) so as to deposit material in a layer (30) on the substrate (29). One reactant, e.g. a readily decomposible cadmium alkyl (Me.sub.2 Cd), is supplied to the reaction zone (C) by means of an injection tube (b 12) which passes through a heated first zone (A) of the vessel (1). The tube (12) has a narrow bore (y) to provide a high flow velocity for this reactant (Me.sub.2 Cd) through the first zone (A). In accordance with the invention, the tube (12) widens in at least one dimension (x), towards its outlet end, so as to provide a wider outlet for injecting the reactant (Me.sub.2 Cd) into the gas stream (38,36) with a lower flow velocity which matches more closely the flow velocity of the gas stream (38,36). A more balanced mixing is achieved leading to improved compositional homogeneity in the deposited layer (30), even for difficult materials such as cadmium mercury telluride. The heated first zone (A) may comprise a capsule (2) containing e.g. a pool o…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.