Method for producing semiconductor thin film by melt and recrystallization process
US4992393A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 1990 |
| Grant date | Feb 12, 1991 |
| Priority date | — |
| Expiry date | May 25, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/09
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a semiconductor thin film by melt and recrystallization process. At least one recess is formed in a stacked layered structure including a semiconductor thin film layer. The recess has an arrow head shape seen from a surface side of the layered structure. The apex of the arrow head shape is oriented to a forward direction on a scanning line. The surface of the layered structure is covered with a cooling medium so that the recess is filled with the cooling medium. An energy beam is irradiated to the layered structure through the cooling medium to scan the structure along the scanning line so as to melt the semiconductor thin film and after that the semiconductor is cooled and recrystallized to form a single crystal structure therein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.