Charge-coupled device channel with countinously graded built-in potential
US4992842A · kind A · utility
13Cited by
7References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 7, 1988 |
| Grant date | Feb 12, 1991 |
| Priority date | — |
| Expiry date | Jul 7, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D44/464
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A charge-coupled device includes an array of closely spaced electrodes aligned along a lateral path on an oxide layer covering a semiconductor substrate. A portion of a channel reigon in the substate below each electrode has a tilted potential gradient providing an electrical field assisting lateral charge carrier drift within the channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.