Polycrystalline silicon active layer for good carrier mobility
US4992846A · kind A · utility
18Cited by
6References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 9, 1990 |
| Grant date | Feb 12, 1991 |
| Priority date | — |
| Expiry date | Jul 9, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of producing a semiconductor device, an amorphous silicon layer is deposited on a polycrystalline silicon layer formed on an insulator layer (SiO.sub.2). Ions are implanted into the amorphous silicon layer while heat treating the amorphous silicon layer at a low temperature thereby forming a solid-phase growth layer, and a transistor is formed of the solid-phase growth layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.