Patent · US Expired

Charge transfer device provided with an improved output stage

US4993053A · kind A · utility

16Cited by
6References
4Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 21, 1988
Grant dateFeb 12, 1991
Priority date
Expiry dateDec 21, 2008

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D44/454

Abstract

There is disclosed a charge transfer device including a semiconductor substrate, a charge transfer section formed on the semiconductor substrate for transferring charges, at least two regions formed in the semiconductor substrate via a PN-junction, one of said regions receiving the charges transferred through the charge transfer section and connected to an output terminal and at least one gate electrode formed on the semiconductor substrate between the regions via an insulator film to form a MOS transistor switch which is switched for controlling the sensitivity of the output stage and the dynamic range of the output signal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.