Plasma pinch system and method of using same
US4994715A · kind A · utility
11Cited by
8References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 21, 1988 |
| Grant date | Feb 19, 1991 |
| Priority date | — |
| Expiry date | Jul 21, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/52
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
A plasma pinch system includes a fluid-jet pinch device for establishing a plasma source composed of a tenuous vapor preconditioning cloud surrounding a central narrow flowing fine stream of fluid under pressure. A discharge device is connected electrically to the fluid-jet pinch device for supplying an electrical flow through a portion of the fluid stream for establishing an incoherent light emitting plasma therealong. A method of using the plasma pinch system for manufacturing semiconductors, includes exposing a semiconductor wafer to the incoherent light emitted by the plasma for either annealing or etching purposes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.