Method and structure for extracting lateral PNP transistor basewidth data at wafer probe
US4994736A · kind A · utility
9Cited by
5References
2Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 6, 1989 |
| Grant date | Feb 19, 1991 |
| Priority date | — |
| Expiry date | Nov 6, 2009 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/275
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method to extract at wafer probe the variation of lateral PNP basewidth of transistors formed in an integrated circuit which uses two lateral PNP devices having different and known basewidths before fabrication of the devices in the integrated circuit and then measuring the ratio of the saturation currents at wafer probe. The actual basewidth of the lateral PNP transistor is then related to the difference of the known basewidths of the two lateral PNP transistors and the ratio of the saturation measured currents thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.