Photoelectric conversion semiconductor device with noise limiting circuit
US4994877A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Feb 10, 1988 |
| Grant date | Feb 19, 1991 |
| Priority date | — |
| Expiry date | Feb 10, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
Abstract
A photoelectric conversion semiconductor device comprising photelectric conversion elements, selection switching elements and a driving circuit for sequentially driving the photoelectric elements. The above structural elements are formed on an insulating and transparent substrate. The driving circuit including a plurality of one-bit shift registers each having one switch and two series-connected complementary metal oxide semiconductor (CMOS) inverters. An input signal of each one-bit shift register is supplied to one of the CMOS inverters. An output signal of the other of the CMOS inverters is supplied to a next stage of the one-bit shift register. One of the output signals of the two CMOS inverters is supplied to one of the selection switching elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.