Circuit substrate and circuit using the substrate
US4994903A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 1989 |
| Grant date | Feb 19, 1991 |
| Priority date | — |
| Expiry date | Dec 18, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/0209
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A circuit having a semiconductor device therein has a novel and improved circuit substrate comprising a layer of organic electrically insulating material having a layer of metal of relatively high electrical conductivity adhered to and supported on one side of the organic material layer forming electrically conductive circuit paths and forming a pad mounting the semiconductor device. A heat sink metal layer is adhered to and supported on an opposite side of the organic material layer for withdrawing heat from the semiconductor device. A multiplicity of particles of materials of relatively higher thermal conductivity than the organic layer material is dispersed in the organic material for enhancing heat withdrawal from the semiconductor device, and the heat-sink metal layer comprises a layer of a first metal of relatively low coefficient of thermal expansion having a plurality of apertures in therethrough and a second metal of relatively much higher thermal conductivity which is disposed in the apertures and on the opposite sides of the low expansion layer and which is metallurgically bonded to the low expansion layer material. The first and second metals in the heat-sink layer prov…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.