Integrated injection-locked semiconductor diode laser
US4995047A · kind A · utility
9Cited by
3References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 30, 1989 |
| Grant date | Feb 19, 1991 |
| Priority date | — |
| Expiry date | Aug 30, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/06243
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.