Optically oriented photoresist pattern forming method using organic crystal in photoresist layer with specified refracting indices formula
US4996123A · kind A · utility
28Cited by
11References
7Claims
0Family size
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Key dates
| Filing date | Feb 24, 1989 |
| Grant date | Feb 26, 1991 |
| Priority date | — |
| Expiry date | Feb 24, 2009 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0085
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optically oriented photoresist material comprised of an organic polymer and an organic crystal material each having a different refractive index to form an optically oriented layer on a substrate wherein the optical waveguide is formed by an effect of the refractive index difference, and in said waveguide layer thus formed, the spread and scattering of lights are suppressed and very fine mask patterns of said photoresist can be produced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.