Method for manufacturing P type semiconductor device employing diffusion of boron glass
US4996168A · kind A · utility
18Cited by
25References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 1, 1988 |
| Grant date | Feb 26, 1991 |
| Priority date | — |
| Expiry date | Nov 1, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved method for manufacturing P type semiconductor device such as used for memories is disclosed. Channeling such as caused by an ion implantation process is prevented by adopting a diffusion method to diffuse boron (7) from a boron glass formed on a layer of polysilicon or silicon oxide on a semiconductor substrate. This method provides a semiconductor device with shallow P type impurity diffusion regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.