Conductive metallization of substrates via developing agents
US4997674A · kind A · utility
12Cited by
13References
36Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 6, 1988 |
| Grant date | Mar 5, 1991 |
| Priority date | — |
| Expiry date | Jun 6, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/122
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A conductive metal layer is formed on a substrate by depositing copper or nickel particles on the substrate, contacting the metal particles with a specified developing agent, and heating the metal particles and the developing agent. The coated substrates have conductive surfaces and are useful for a variety of uses such as EMI shielding and printed circuit boards.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.