MSM photodetector with superlattice
US4998154A · kind A · utility
9Cited by
4References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 18, 1990 |
| Grant date | Mar 5, 1991 |
| Priority date | — |
| Expiry date | Jan 18, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/146
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A Metal-Semiconductor-Metal (MSM) photodetector comprises a semiconductor substrate, a semiconductor barrier layer on the substrate, a thin semiconductor active layer on the barrier layer, and at least two electrical contacts to the active layer. The barrier layer prevents carriers generated deep in the substrate from reaching the contacts. As it is the delayed detection of these carriers which limits the useful operating speed or bandwidth of conventional MSM photodetectors, the MSM photodetector according to the invention is capable of higher speed operation than conventional MSM photodetectors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.