High purity diffusion furnace components
US4998879A · kind A · utility
31Cited by
4References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 18, 1989 |
| Grant date | Mar 12, 1991 |
| Priority date | — |
| Expiry date | Apr 18, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S414/14
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Components for semiconductor diffusion furnaces are constructed of a high purity impervious silicon carbide or silicon nitride matrix deposited on a pre-shaped fibrous matrix of silicon carbide, carbon, or carbon coated silicon carbide. The high purity of the matrix prevents undesired gaseous components from contaminating the atmosphere of the furnace, and the fibrous re-enforcement provides strength combined with light weight.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.