Electronic and optoelectronic laser devices utilizing light hole properties
US4999682A · kind A · utility
34Cited by
1References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 26, 1989 |
| Grant date | Mar 12, 1991 |
| Priority date | — |
| Expiry date | Dec 26, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0424
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Improved p-channel FETs and optoelectronic device make use of reduced hole effective mass achieved with quantum confinement. The devices include multiple one-dimensional p-channel FETs which have electrically induced and controllable one dimensional p-type semiconductor wires; square well two-dimensional p-channel FETs; and laser diodes and light emitting diodes which use one dimensional p-type semiconductor wires.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.