Method of priming semiconductor substrate for subsequent photoresist masking and etching
US5001083A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 12, 1988 |
| Grant date | Mar 19, 1991 |
| Priority date | — |
| Expiry date | Jul 12, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/95
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method of improving semiconductor device yield by enhancing photoresist adherence to semiconductor substrates during device fabrication. The surface of a layer, such as silicon oxide of silicon nitride, on a semiconductor substrate is coated with a thin layer of oxygen-reactive metal prior to applying photoresist material thereto. The metal is selected from the group consisting of tungsten, titanium, chromium, and combinations thereof; the thickness of the layer of oxygen-reactive metal is of the order of 50-100 .ANG.. The metal coating facilitates the adhesion of the resist material and reduces undercutting of the layer to be etched.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.