Thin film resistor for strain gauge
US5001454A · kind A · utility
7Cited by
3References
6Claims
0Family size
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Inventors
Key dates
| Filing date | Sep 7, 1989 |
| Grant date | Mar 19, 1991 |
| Priority date | — |
| Expiry date | Sep 7, 2009 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L1/2287
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A thin film resistor for a strain gauge prepared by physical or chemical vapor deposition. The resistor contains 60 to 98 atomic % of chromium, 2 to 30 atomic % of oxygen, and 0 to 10 atomic % of a metal or semiconductor. These constituents are uniformly distributed. The thickness of the film is between 0.01 and 10 .mu.m. The metal is at least one of Al, Ti, Ta, Zr and In, and the semiconductor is at least one of silicon, germanium and boron. The thin film resistor has excellent resistance-strain characteristics and resistance-temperature characteristics, as well as high sensitivity and mechanical strength.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.