Process for producing an inorganic thin film on a substrate using a target

US5002648A · kind A · utility

Assignee

• Hoechst GmbH · DE

Inventors

• Eugen Morach · Liederbach, DE
• Marcellus Peuckert · Hofheim, DE
• Gunter Schmidt · Houghton, US
• Hans-Peter Scholch · Erlangen, DE

Key dates

• Filing date: Aug 24, 1989
• Grant date: Mar 26, 1991
• Expiry date: Aug 24, 2009

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S505/731
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

An inorganic thin film is deposited on a substrate by sputtering a sputter target by cathode sputtering in the vicinity of the substrate. To produce the target, at least two pulverulent starting components are mixed. The mixture is tempered if a uniform reaction product can be obtained in this process. It is powdered and the powder is deposited on a metallic base by plasma-jet spraying. This produces the target. Preferably, an oxide mixture is tempered which is a starting product for a superconducting ceramic material. In order to convert the thin film deposited to a superconducting state, it is treated for a prolonged time at temperatures of 300.degree.-800.degree. C. in an oxygen-containing atmosphere. The reaction product obtained on tempering may have, for example, the overall composition ZBa.sub.m Cu.sub.n O.sub.x, where 1.5.ltoreq.m.ltoreq.2.5, 2.ltoreq.n.ltoreq.5 and 4.ltoreq.x.ltoreq.9, Z standing for at least one of the elements Y, La, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb and Lu, or may have the overall compositions TlBa.sub.l Ca.sub.m Cu.sub.n O.sub.x or BiSr.sub.l Ca.sub.m Cu.sub.n O.sub.x, where 0.3.ltoreq.1.ltoreq.3, 0.3.ltoreq. m.ltoreq.3, 0.3.ltoreq.n.ltoreq.3 and 2.lt…