Electrical contacts on diamond
US5002899A · kind A · utility
33Cited by
5References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 22, 1990 |
| Grant date | Mar 26, 1991 |
| Priority date | — |
| Expiry date | Mar 22, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/268
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming ohmic contacts on diamond substrates, where, by irradiating a diamond substrate with radiation having a wavelength in the neighborhood of 193 nm, regions of enhanced electrical conductivity may be formed without substantially heating the substrate surface. Metal films may be applied to obtain ohmic or Schottky type contacts on the irradiated sites. The invention may be used to form regions of anisotropic and isotropic enhanced conductivity. Regions of anisotropic conductivity may be employed as polarizing optical devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.